Commit Graph

2 Commits

Author SHA1 Message Date
Tong Ho
512a63b2b0 hw/nvram: Fix Memory Leak in Xilinx Versal eFuse device
Signed-off-by: Tong Ho <tong.ho@xilinx.com>
Reviewed-by: Edgar E. Iglesias <edgar.iglesias@xilinx.com>
Reviewed-by: Francisco Iglesias <frasse.iglesias@gmail.com>
Reviewed-by: Philippe Mathieu-Daudé <f4bug@amsat.org>
Message-Id: <20211015203532.2463705-3-tong.ho@xilinx.com>
Signed-off-by: Laurent Vivier <laurent@vivier.eu>
2021-10-23 18:50:33 +02:00
Tong Ho
9e4aa1fafe hw/nvram: Introduce Xilinx Versal eFuse device
This implements the Xilinx Versal eFuse, an one-time
field-programmable non-volatile storage device.  There is
only one such device in the Xilinx Versal product family.

This device has two separate mmio interfaces, a controller
and a flatten readback.

The controller provides interfaces for field-programming,
configuration, control, and status.

The flatten readback is a cache to provide a byte-accessible
read-only interface to efficiently read efuse array.

Co-authored-by: Edgar E. Iglesias <edgar.iglesias@xilinx.com>
Co-authored-by: Sai Pavan Boddu <sai.pavan.boddu@xilinx.com>

Signed-off-by: Edgar E. Iglesias <edgar.iglesias@xilinx.com>
Signed-off-by: Sai Pavan Boddu <sai.pavan.boddu@xilinx.com>
Signed-off-by: Tong Ho <tong.ho@xilinx.com>
Message-id: 20210917052400.1249094-3-tong.ho@xilinx.com
Reviewed-by: Peter Maydell <peter.maydell@linaro.org>
Signed-off-by: Peter Maydell <peter.maydell@linaro.org>
2021-09-30 13:42:10 +01:00